![]() ![]() ![]() ![]() ![]() ![]() ![]() CDBER0130L-HF SMD Schottky Barrier Diode Page 1 REV:B 0.053(1.35) 0.045(1.15) 0.034(0.85) 0.026(0.65) 0.030(0.75) 0.024(0.60) Dimensions in inches and (millimeter) 0.022(0.55) Typ. 0.016(0.40) Typ. Comchip Technology CO., LTD. A mA V V 1 100 30 35 IO VR VRRM IFSM 8.3ms single half sine-wave superimposed on rate load(JEDEC method) O C O C +125 +125 -40 TSTG Tj Storage temperature Junction temperature Average forward current Reverse voltage Repetitive peak reverse voltage Forward current,surge peak Parameter Conditions Symbol Min Typ Max Unit uA V 10 0.35 IR VF Reverse current Forward voltage Parameter Conditions Symbol Min Typ Max Unit VR = 1 0 V IF = 1 0 mA 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 QW-G1041 0503/SOD-723F Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin/leadless package. - Majority carrier conduction. Mechanical data - Case: 0503/SOD-723F standard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: cathode band & BP - Mounting position: Any - Weight: 0.002 gram(approx.). Io = 1 00 mA VR = 3 0 Volts RoHS Device Halogen Free |
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